This book covers several of the most important topics of current interest at the forefront of scanning probe microscopy. These include a realistic theory of atom-resolving atomic force microscopy (AFM), fundamentals of MBE growth of III-V compound semiconductors and atomic manipulation for future single-electron devices.

Theory of Scanning Probe Microscopy.- First-Principles Electronic Structure Theory for Semiconductor Surfaces.- Atomic Structure of 6H-SiC.- Application of Atom Manipulation for Fabricating Nanoscale and Atomic-scale Structures on Si Surfaces.- Theoretical Insights into Fullerenes Absorbed on Surfaces: Comparison with STM Studies.- Apparent Barrier Height and Barrier-Height Imaging of Surfaces.- Mesoscopic Work Function Measurement by Scanning Tunneling Microscope.- Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces.- Adsorption of Fullerenes on Semiconductor and Metal Surfaces Investigated by Field-Ion Scanning Microscopy.